3D Stacked Chips: From Emerging Processes to Heterogeneous - download pdf or read online

By Ibrahim (Abe) M. Elfadel, Gerhard Fettweis

ISBN-10: 3319204807

ISBN-13: 9783319204802

ISBN-10: 3319204815

ISBN-13: 9783319204819

This booklet explains for readers how 3D chip stacks promise to extend the extent of on-chip integration, and to layout new heterogeneous semiconductor units that mix chips of other integration applied sciences (incl. sensors) in one package deal of the smallest attainable dimension. The authors concentrate on heterogeneous 3D integration, addressing the most vital demanding situations during this rising know-how, together with contactless, optics-based, and carbon-nanotube-based 3D integration, in addition to signal-integrity and thermal administration concerns in copper-based 3D integration. assurance additionally comprises the 3D heterogeneous integration of strength assets, photonic units, and non-volatile stories according to new fabrics systems.

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Extra info for 3D Stacked Chips: From Emerging Processes to Heterogeneous Systems

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Hwang, Investigation on the growth initiation of Ru thin films by atomic layer deposition. Chem. Mater. 22(9), 2850–2856 (2010) 13. M. Leskelä, M. Ritala, Atomic layer deposition (ALD): from precursors to thin film structures. Thin Solid Films 409(1), 138–146 (2002) 14. M. George, Atomic layer deposition: an overview. Chem. Rev. 110(1), 111–131 (2009) 15. K. Schroder, Semiconductor Material and Device Characterization (Wiley, New York, 2006) 16. H. Wojcik, R. Kaltofen, U. Merkel, C. Krien, S. Strehle, J.

Indeed, the production of high aspect ratio TSV requires deposition process enabling the deposition of homogeneous layers on large aspect ratios. In principle, three different deposition processes with a variety of materials are available: physical vapor deposition (PVD), chemical vapor deposition (CVD), and ALD. Depending on the deposition process, the coverage in the high aspect ratio structures can be very inhomogeneous, with increasing loss in film thickness when approaching the trench 18 S.

Wojcik, R. Kaltofen, U. Merkel, C. Krien, S. Strehle, J. Gluch, M. Knaut, C. Wenzel, A. W. , Electrical evaluation of Ru–W (-N), Ru–Ta (-N) and Ru–Mn films as Cu diffusion barriers. Microelectron. Eng. 92, 71–75 (2012) 17. D. Edelstein, C. Uzoh, C. , P. DeHaven, P. Buchwalter, A. Simon, E. Cooney, S. Malhotra, D. Klaus, H. , A high performance liner for copper damascene interconnects, in Proceedings of the IEEE 2001 International Interconnect Technology Conference (IEEE, Piscataway, New Jersey, 2001), pp.

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3D Stacked Chips: From Emerging Processes to Heterogeneous Systems by Ibrahim (Abe) M. Elfadel, Gerhard Fettweis

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